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Technical information

The TCLT1103 consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 5-lead SOP-6L packages. COMPAREABLE TO CNY17 and to EL817 / PC817 (compare the above illustration) The internal schematic (diode and phototransistor) of the TCLT1103 is identical to CNY17 and to EL817 / PC817 (without the external collector-pin).

Due to the partial better parameter values, the TCLT1103 is absolutely compareable to CNY17 and to EL817 / PC817. The 2-pin Side (diode) of the TCLT1103 package is pin-compatible including grid dimension (2,54mm). For the 3-pin side (phototransistor) it is necessary to a modification (grid dimension 1.27mm see above illustration).

FEATURES: 
• SMD low profile 5 pin package • Isolation test voltage 5000 VRMS
• Special construction • Extra low coupling capacitance
• Connected base • DC input with transistor output 
• Creepage distance > 8 mm

APPLICATIONS: 
• Switchmode power supplies 
• Computer peripheral interface 
• Microprocessor system interface.